The MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a four-terminal semiconductor device widely used in digital and analog circuits.
M<name> <drain> <gate> <source> <bulk> <model_name> [L=<length>] [W=<width>] [M=<m>] [IC=<vds>[,<vgs>[,<vbs>]]] [OFF]
| Parameter | Description |
|---|---|
drain |
Drain node |
gate |
Gate node |
source |
Source node |
bulk |
Bulk/substrate node |
model_name |
Name of a .MODEL NMOS(...) or .MODEL PMOS(...) definition |
L=length |
Channel length |
W=width |
Channel width |
M=m |
Multiplier (parallel devices) |
IC=vds[,vgs[,vbs]] |
Initial junction voltages for UIC |
OFF |
Initial guess: device is off |
M1 OUT IN 0 0 NMOS_MODEL L=1u W=10u
M2 OUT IN VDD VDD PMOS_MODEL L=0.5u W=20u
M3 D G S B my_nmos L=0.18u W=2u M=4
.MODEL NMOS_MODEL NMOS(VTO=0.7 KP=110u GAMMA=0.4 LAMBDA=0.04 PHI=0.65)
.MODEL PMOS_MODEL PMOS(VTO=-0.7 KP=50u GAMMA=0.57 LAMBDA=0.05 PHI=0.65)
| Parameter | Description |
|---|---|
VTO |
Threshold voltage |
KP |
Transconductance parameter |
GAMMA |
Body-effect parameter |
LAMBDA |
Channel-length modulation |
PHI |
Surface potential |
TOX |
Oxide thickness |
CBD |
Bulk-drain junction capacitance |
CBS |
Bulk-source junction capacitance |
SpiceSharpParser supports MOS Level 1 (Shichman-Hodges), Level 2, and Level 3 models, automatically selected based on the LEVEL parameter:
.MODEL my_nmos NMOS(LEVEL=1 VTO=0.7 KP=110u)
.MODEL my_nmos2 NMOS(LEVEL=2 VTO=0.7 KP=110u)
.MODEL my_nmos3 NMOS(LEVEL=3 VTO=0.7 KP=110u)
CMOS inverter
VDD VDD 0 3.3
VIN IN 0 PULSE(0 3.3 0 1n 1n 10n 20n)
M1 OUT IN VDD VDD PMOS_MODEL L=0.5u W=2u
M2 OUT IN 0 0 NMOS_MODEL L=0.5u W=1u
.MODEL PMOS_MODEL PMOS(VTO=-0.7 KP=50u)
.MODEL NMOS_MODEL NMOS(VTO=0.7 KP=110u)
.TRAN 0.1n 40n
.SAVE V(OUT) V(IN)
.END