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[feature] STM32G4: Erase pages on flash bank 2 #1457

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Mar 5, 2025
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3 changes: 2 additions & 1 deletion inc/stm32_flash.h
Original file line number Diff line number Diff line change
Expand Up @@ -181,7 +181,8 @@
#define STM32_FLASH_Gx_CR_PNB (3) /* Page number */
#define STM32_FLASH_G0_CR_PNG_LEN (5) /* STM32G0: 5 page number bits */
#define STM32_FLASH_G4_CR_PNG_LEN (7) /* STM32G4: 7 page number bits */
#define STM32_FLASH_Gx_CR_BKER (13) /* Bank selection for erase operation */
#define STM32_FLASH_G0_CR_BKER (13) /* Bank selection for erase operation on G0*/
#define STM32_FLASH_G4_CR_BKER (11) /* Bank selection for erase operation on G4*/
#define STM32_FLASH_Gx_CR_MER2 (15) /* Mass erase (2nd bank)*/
#define STM32_FLASH_Gx_CR_STRT (16) /* Start */
#define STM32_FLASH_Gx_CR_OPTSTRT (17) /* Start of modification of option bytes */
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4 changes: 2 additions & 2 deletions src/stlink-lib/common_flash.c
Original file line number Diff line number Diff line change
Expand Up @@ -1130,9 +1130,9 @@ int32_t stlink_erase_flash_page(stlink_t *sl, stm32_addr_t flashaddr) {
// In this case we need to specify which bank to erase (sec 3.7.5 - BKER)
if(sl->flash_size > (128 * 1024) &&
((flashaddr - STM32_FLASH_BASE) >= sl->flash_size / 2)) {
val |= (1 << STM32_FLASH_Gx_CR_BKER); // erase bank 2
val |= (1 << STM32_FLASH_G4_CR_BKER); // erase bank 2
} else {
val &= ~(1 << STM32_FLASH_Gx_CR_BKER); // erase bank 1
val &= ~(1 << STM32_FLASH_G4_CR_BKER); // erase bank 1
}
val |= ((flash_page & 0x7FF) << 3) | (1 << FLASH_CR_PER);
stlink_write_debug32(sl, STM32_FLASH_Gx_CR, val);
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